MOS Clean Bench
Manufacturer: Air Controls
The MOS Clean bench and its Teflon contents are used exclusively for cleaning of metal oxide semiconductor structures.
The hood contains four tanks, three of which are heated, and four quick dump rinse (QDR) tanks. The MOS Clean sequence consists of a 120 °C Piranha Clean (H2SO4/H2O2), 70 °C RAC#1 Caustic (NH4OH/H2O2/Dl) Clean, 70 °C RCA#2 Acidic (HCl/H2O2/Dl) Clean, and an optional HF Dip (50:1, unbuffered 49% HF). Each tank has its own programmable timer and QDR for rinsing.
Strict protocol must be maintained to prevent contamination. Glove replacement and hood contents must be followed at ALL times.
The PSC-101 is a five-step spin dryer that is to be used in conjunction with the MOS clean hood. While it is housed outside of the MOS clean hood, it is considered to be part of it. Protocol compliant with the MOS clean must be observed.
The five-step dry process consists of a spin, quality spin with resistivity monitoring, purge and two dry steps. Time and spin speeds are changed for all the steps except the quality spin, which monitors resistivity.
Operating Instructions
Allowed Materials
Si wafers only. New wafers or wafers that have never had metal or dielectric deposited or grown on them.
Prohibited Materials
Anything other than Si wafers. Wafers must not have been exposed to any metal deposition or dielectric films.