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Oxford ICP-RIE

Oxford I C P R I E

Manufacturer: Oxford

The Oxford system is an inductive coupled plasma (ICP) reactor that is used for reactive ion etches. The Oxford plasma ICP etcher is configured for etching semiconductor films using fluorine-based chemistries. This etching system will be characterized by having a high plasma density, low process pressure, high etch rate, good etch uniformity, and low energy ion damage. The tool is equipped with a vacuum load-lock which allows the process chamber to remain under high vacuum. A fiber optic/CCD end-point detector is attached to the reactor, which provides the capability to determine the ending time of an etching process.

Gas configuration: C4F8, CHF3, CF4, SF6, O2, N2, He, Ar

Operating Instructions

Operating Instructions

Allowed Materials

Si, Ge, C, GaAs and its compounds, InP and its compounds, cleaned SiO2 (glass), and cleaned Al2O3 (sapphire)

Prohibited Materials

High vapor pressure metals including: indium, lead, tin, and zinc

Magnetic materials including: iron, nickel, and cobalt