MOCVD
Manufacturer: Structured Materials
The Structured Materials Inc. (SMI) metal organic chemical vapor deposition (MOCVD) system is used to create high purity crystalline compound semiconductor thin films like GaN. The SMI system can heat substrates upward of 1100 °C in a variety of gasses. The four (4) gas flow needle valves allow precise control of deposition uniformity. Inner and outer heaters with independent power supplies allow for tailored substrate heating and control. The system is composed of conflat seals for low vacuum permeability. Hydrogen rich growth environment allows for oxygen gettering to reduce oxidation of the GaN material as it grows.
Bubbler sources: TMAl (clogged and not working) and TMGa
Gases: CH4, SiH4, NH3, Argon, H2, and N2